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shindengen 2SK2668 copyright & copy;2000 shindengen electric mfg.co.ltd outline dimensions ratings ( fp3w90hvx2 ) (unit : mm) 900v 3a n-channel enhancement type hvx-2 series power mosfet case : ito-3p switching power supply of ac 240v input high voltage power supply inverter application input capacitance (ciss) is small. especially, input capacitance at 0 biass is small. the static rds(on) is small. the switching time is fast. avalanche resistance guaranteed. features absolute maximum ratings tc = 25 item symbol conditions ratings unit storage temperature t stg -55 1 50 channel temperature t ch 1 50 drain-source voltage v dss 900 v gate-source voltage v gss 30 continuous drain current dc i d 3 continuous drain current peak) i dp pulse width Q1 0 s, duty cycle Q1 / 1 00 6a continuous source current dc i s 3 total power dissipation p t 40 w repetitive avalanche current i ar t ch = 1 50 3a single avalanche energy e as t ch = 25 48 mj repetitive avalanche energy e ar t ch = 25 4.8 dielectric strength v dis terminals to case, ac 1 minute 2kv mounting torque tor recommended torque 0.5 n ? m 0.8 n ? m
copyright & copy;2000 shindengen electric mfg.co.ltd 2SK2668 ( fp3w90hvx2 ) hvx-2 series power mosfet electrical characteristics tc = 25 item symbol conditions min. typ. max. unit drain-source breakdown voltage v (br)dss i d = 1 ma, v gs = 0v 900 v zero gate voltage drain current i dss v ds = 900v, v gs = 0v 250 a gate-source leakage current i gss v gs = 30v, v ds = 0v 0. 1 forward tran conductance g fs i d = 1 .5a, v ds = 1 0v 1 .5 2.5 s static drain-source on- tate resistance r ds(on) i d = 1 .5a, v gs = 1 0v 3.5 4.7 gate threshold voltage v th i d = 1 ma, v ds = 1 0v 2.5 3.0 3.5 v source-drain diode forward voltage v sd i s = 1 .5a, v gs = 0v 1 .5 thermal resistance jc junction to case 3. 1 2 / total gate charge q g v dd = 400v, v gs = 1 0v, i d = 3a 30 nc input capacitance c iss 630 reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1 mh z 1 6pf output capacitance c oss 67 turn-on time t on i d = 1 .5a, r l = 1 00 , v gs = 1 0v 40 70 ns turn-off time t off 1 40 230
0 1 2 3 4 5 6 0 5 10 15 20 2SK2668 transfer characteristics tc = - 55 c 25 c 100 c 150 c v ds = 25v typ gate-source voltage v gs [v] drain current i d [a]
static drain-source on-state resistance 0.1 1 10 100 -50 0 50 100 150 2SK2668 v gs = 10v pulse test typ i d = 1.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ]
gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2SK2668 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v]
safe operating area 0.01 0.1 1 10 1 10 100 1000 2SK2668 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit
transient thermal impedance 0.01 0.1 1 10 2SK2668 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
0 20 40 60 80 100 0 50 100 150 2SK2668 single avalanche energy derating [%] starting channel temperature tch [ c] single avalanche energy derating
capacitance 1 10 100 1000 10000 0 20 40 60 80 100 2SK2668 0.005 f=1mhz ta=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf]
single avalanche current - inductive load 0.1 1 10 2SK2668 0.1 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 v dd = 100v v gs = 15v ? 0v rg = 70 w i as = 3a e as = 48mj e ar = 4.8mj inductance l [mh] single avalanche current i as [a]
0 20 40 60 80 100 0 50 100 150 2SK2668 power derating power derating [%] case temperature tc [ c]
0 10 20 30 40 50 0 100 200 300 400 500 2SK2668 0 5 10 15 20 200v gate charge characteristics i d = 3a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v]

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